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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION EFM201 THRU EFM206 SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 400 Volts CURRENT 2.0 Amperes FEATURES * * * * * * Glass passivated device Ideal for surface mounted applications Low leakage current Metallurgically bonded construction Mounting position: Any Weight: 0.098 gram DO-214AA 0.083 (2.11) 0.077 (1.96) 0.180 (4.57) 0.160 (4.06) MECHANICAL DATA * Epoxy : Device has UL flammability classification 94V-0 0.155 (3.94) 0.130 (3.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. o 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) 0.012 (0.305) 0.006 (0.152) 0.008 (0.203) 0.004 (0.102) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Volts Maximum DC Blocking Voltage Maximum Average Forward Current at TA = 55 oC Peak Forward Surge Current IFM (surge): 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) Typical Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC IO IFSM CJ TJ, TSTG 30 -65 to + 175 EFM201 50 35 50 EFM202 100 70 100 EFM203 150 105 150 2.0 75 20 EFM204 200 140 200 EFM205 300 210 300 EFM206 400 280 400 UNITS Volts Volts Volts Amps Amps pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage at 2.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. @TA = 25 o C @TA =150 o C SYMBOL VF IR trr EFM201 EFM202 EFM203 0.95 EFM204 EFM205 EFM206 1.25 UNITS Volts uAmps 50 35 nSec 2001-5 5.0 RATING AND CHARACTERISTIC CURVES ( EFM201 THRU EFM206 ) AVERAGE FORWARD CURENT, (A) FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 10 NONINDUCTIVE FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 3.0 2.0 Single Phase Half Wave 60Hz Resistive or Inductive Load trr +0.5A (-) PULSE GENERATOR (NOTE 2) (+) 25 Vdc (approx) (-) D.U.T 0 -0.25A 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) 1.0 -1.0A NOTES:1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 0 0 25 50 75 100 125 150175 1cm SET TIME BASE FOR 10 ns/cm AMBIENT TEMPERATURE ( ) FIG. 3 - TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT, (uA) INSTANTANEOUS FORWARD CURRENT, (A) FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 20 4 100 ~E FM M2 EF TJ = 100 EF 1.0 .1 .1 TJ = 25 Pulse Width = 300uS 1% Duty Cycle .01 .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) PEAK FORWARD SURGE CURRENT, (A) .001 0 .2 .4 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, (pF) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 105 90 75 60 45 30 15 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 8.3ms Single Half Sine-Wave (JEDEC Method) 200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 TJ = 25 EFM 201 M 20 10 01 TJ = 25 5~ 1.0 EF M TJ = 150 20 6 EFM ~EF 205 M2 04 ~EF M2 06 REVERSE VOLTAGE, ( V ) RECTRON |
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